Nexperia PDTD113EQAZ

Nexperia · Transistors (BJTs) · MPN PDTD113EQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain33
Operating Temperature-
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor1kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation940mW
Voltage - Input(Max)(VI(off))1.05V
Input Voltage (VI(on)@Ic,Vce)1.45V

Technical details

50V 33 500mA 1 NPN (Pre-Biased) 940mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS

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