Nexperia PDTC144EMB,315

Nexperia · Transistors (BJTs) · MPN PDTC144EMB,315

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))150mV
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Input Resistor61kΩ
Resistor Ratio1.2
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

50V 80 100mA 250mW 1 NPN (Pre-Biased) NPN SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS

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