Nexperia PDTC143XQAZ

Nexperia · Transistors (BJTs) · MPN PDTC143XQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain50
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor4.7kΩ
Resistor Ratio2.1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation280mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2.5V@20mA,0.3V

Technical details

50V 50 100mA 1 NPN (Pre-Biased) 280mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS

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