Nexperia PDTC124XT,215

Nexperia · Transistors (BJTs) · MPN PDTC124XT,215

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain80
Vce Saturation(VCE(sat))150mV
Current - Collector(Ic)100mA
Input Resistor22kΩ
typeNPN
Resistor Ratio2.6
Number1 NPN (Pre-Biased)
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

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