Nexperia PDTC123TM,315

Nexperia · Transistors (BJTs) · MPN PDTC123TM,315

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Operating Temperature-
Vce Saturation(VCE(sat))150mV@10mA,0.5mA
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor2.86kΩ
Resistor Ratio-
Pd - Power Dissipation250mW

Technical details

50V 30 100mA 250mW NPN 1 NPN (Pre-Biased) SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS

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