Nexperia PDTC115EUF

Nexperia · Transistors (BJTs) · MPN PDTC115EUF

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-65℃~+150℃
Current - Collector(Ic)20mA
Input Resistor130kΩ
Resistor Ratio1
Number-
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@1mA,0.3V

Technical details

50V 80 20mA 250mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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