Nexperia PDTC114YU-QX

Nexperia · Transistors (BJTs) · MPN PDTC114YU-QX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain100
Emitter-Base Voltage VEBO6V
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))100mV
Current - Collector(Ic)100mA
Input Resistor10kΩ
Resistor Ratio4.7
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

50V 100 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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