Nexperia PDTC114YM,315

Nexperia · Transistors (BJTs) · MPN PDTC114YM,315

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Vce Saturation(VCE(sat))100mV
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Input Resistor13kΩ
Resistor Ratio4.7
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))500mV

Technical details

50V 100 100mA 250mW NPN 1 NPN (Pre-Biased) SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS

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