Nexperia · Transistors (BJTs) · MPN PDTC114YM,315
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 230MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 13kΩ |
| Resistor Ratio | 4.7 |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 500mV |
50V 100 100mA 250mW NPN 1 NPN (Pre-Biased) SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS