Nexperia PDTC114EMB,315

Nexperia · Transistors (BJTs) · MPN PDTC114EMB,315

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Specifications

Collector - Emitter Voltage VCEO50V
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.8V@10mA,0.3V

Technical details

50V 100mA 250mW SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS

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