Nexperia PDTB143XQAZ

Nexperia · Transistors (BJTs) · MPN PDTB143XQAZ

No reviews yet — be the first to review Nexperia PDTB143XQAZ.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Input Resistor4.7kΩ
Resistor Ratio4.55
Number1 PNP Pre-Biased
Pd - Power Dissipation575mW

Technical details

50V 70 500mA 1 PNP Pre-Biased 575mW DFN1010-3 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)