Nexperia PDTB123EQA147

Nexperia · Transistors (BJTs) · MPN PDTB123EQA147

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Specifications

Collector - Emitter Voltage VCEO50V
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Resistor Ratio1
Pd - Power Dissipation575mW

Technical details

50V 500mA 575mW Single, Pre-Biased Bipolar Transistors RoHS

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