Nexperia PDTB114EUF

Nexperia · Transistors (BJTs) · MPN PDTB114EUF

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+175℃
Current - Collector(Ic)500mA
Input Resistor10kΩ
Resistor Ratio1
Number-
Pd - Power Dissipation425mW

Technical details

50V 70 500mA 425mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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