Nexperia · Transistors (BJTs) · MPN PDTB113ZQAZ
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Input Resistor | 1kΩ |
| Resistor Ratio | 10 |
| Pd - Power Dissipation | 325mW |
| Voltage - Input(Max)(VI(off)) | 300mV |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 500mA 575mW Surface Mount DFN1010D-3