Nexperia PDTA143ZT-QR

Nexperia · Transistors (BJTs) · MPN PDTA143ZT-QR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain100
Emitter-Base Voltage VEBO5V
Vce Saturation(VCE(sat))100mV
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Input Resistor4.7kΩ
Resistor Ratio10
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)1.3V

Technical details

50V 100 100mA 250mW 1 PNP Pre-Biased PNP SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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