Nexperia PDTA143XT,215

Nexperia · Transistors (BJTs) · MPN PDTA143XT,215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
DC Current Gain50
Vce Saturation(VCE(sat))100mV
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Input Resistor4.7kΩ
Resistor Ratio2.1
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)2.5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

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