Nexperia PDTA124ET-QVL

Nexperia · Transistors (BJTs) · MPN PDTA124ET-QVL

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain60
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))150mV@10mA,0.5mA
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Output Voltage(VO(on))-
Input Resistor28.6kΩ
Resistor Ratio1
Pd - Power Dissipation250mW

Technical details

50V 60 100mA 250mW 1 PNP Pre-Biased PNP SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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