Nexperia · Transistors (BJTs) · MPN PDTA115ET,215
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 80 |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 20mA |
| Input Resistor | 130kΩ |
| Resistor Ratio | 1.2 |
| Number | 1 PNP Pre-Biased |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Voltage - Input(Max)(VI(off)) | 500mV |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 20mA 250mW Surface Mount SOT-23