Nexperia · Transistors (BJTs) · MPN PDTA114EU-QX
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 30 |
| Emitter-Base Voltage VEBO | 10V |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -65℃~+150℃ |
| Input Resistor | 10kΩ |
| Number | 1 PNP Pre-Biased |
| type | PNP |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V |
50V 30 100mA 1 PNP Pre-Biased PNP 200mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS