Nexperia · Transistors (BJTs) · MPN PBSS8510PA,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 285 |
| Pd - Power Dissipation | 1.4W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5.2A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 250mV |
100V 285 1 NPN NPN 5.2A SOT-1061 Single Bipolar Transistors RoHS