Nexperia PBSS8510PA,115

Nexperia · Transistors (BJTs) · MPN PBSS8510PA,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
DC Current Gain285
Pd - Power Dissipation1.4W
Number1 NPN
typeNPN
Current - Collector(Ic)5.2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

100V 285 1 NPN NPN 5.2A SOT-1061 Single Bipolar Transistors RoHS

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