Nexperia PBSS5560PA,115

Nexperia · Transistors (BJTs) · MPN PBSS5560PA,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain135
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation2.1W
Number1 PNP
typePNP
Current - Collector(Ic)5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))450mV

Technical details

Bipolar (BJT) Transistor PNP 60V 5A 90MHz 2.1W Surface Mount SOT-1061

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