Nexperia · Transistors (BJTs) · MPN PBSS5260PAP,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 110 |
| Pd - Power Dissipation | 510mW |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 7V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 365mV |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 2A |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor PNP 60V 2A 100MHz 510mW Surface Mount DFN2020-6