Nexperia PBSS5160T-QR

Nexperia · Transistors (BJTs) · MPN PBSS5160T-QR

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)220MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain350
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation400mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))330mV
Operating Temperature-65℃~+150℃

Technical details

60V 350 1 PNP PNP 1A TO-236AB Single Bipolar Transistors RoHS

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