Nexperia PBSS5160QAZ

Nexperia · Transistors (BJTs) · MPN PBSS5160QAZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain160
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))225mV

Technical details

Bipolar (BJT) Transistor PNP 60V 1A 100MHz 1W Surface Mount DFN1010D-3

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