Nexperia PBSS5130QAZ

Nexperia · Transistors (BJTs) · MPN PBSS5130QAZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain130
Pd - Power Dissipation325mW
typePNP
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))160mV

Technical details

30V 130 PNP 1A DFN1010-3 Single Bipolar Transistors RoHS

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