Nexperia PBSS4160XF

Nexperia · Transistors (BJTs) · MPN PBSS4160XF

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain170
Pd - Power Dissipation950mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 0.95W Surface Mount SOT-89

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