Nexperia PBSS4160V,115

Nexperia · Transistors (BJTs) · MPN PBSS4160V,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)220MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain200
Pd - Power Dissipation-
typeNPN
Current - Collector(Ic)900mA
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

60V 200 NPN 900mA SOT-666-6 Single Bipolar Transistors RoHS

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