Nexperia PBSS4160U,115

Nexperia · Transistors (BJTs) · MPN PBSS4160U,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)220MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation415mW
Number1 NPN
typeNPN
Current - Collector(Ic)750mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))280mV

Technical details

Bipolar (BJT) Transistor NPN 60V 750mA 220MHz 415mW Surface Mount SOT-323-3

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