Nexperia PBSS4160PANPSX

Nexperia · Transistors (BJTs) · MPN PBSS4160PANPSX

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Specifications

Current - Collector Cutoff100nA
DC Current Gain150
Pd - Power Dissipation370mW
Collector - Emitter Voltage VCEO60V
Transition frequency(fT)175MHz;125MHz
Vce Saturation(VCE(sat))175mV
typeNPN+PNP
Current - Collector(Ic)1A
Operating Temperature-

Technical details

150 370mW 60V NPN+PNP 1A DFN2020D-6 Bipolar Transistor Arrays RoHS

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