Nexperia PBSS4160DS-QH

Nexperia · Transistors (BJTs) · MPN PBSS4160DS-QH

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Specifications

Current - Collector Cutoff50uA
Pd - Power Dissipation700mW
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)220MHz
typeNPN
Vce Saturation(VCE(sat))250mV
Number2 NPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃

Technical details

700mW 60V NPN 1A TSOP-6 Bipolar Transistor Arrays RoHS

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