Nexperia · Transistors (BJTs) · MPN PBSS4160DPN,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 200 |
| Pd - Power Dissipation | 420mW |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 220MHz;185MHz |
| Vce Saturation(VCE(sat)) | 120mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 870mA;770mA |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 60V 870mA;;;770mA 220MHz;;;185MHz 420mW Surface Mount SOT-457