Nexperia · Transistors (BJTs) · MPN PBSS306NX,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 110MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 1.65W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 4.5A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 40mV |
Bipolar (BJT) Transistor NPN 100V 4.5A 110MHz 1.65W Surface Mount SOT-89