Nexperia PBSS305PD,115

Nexperia · Transistors (BJTs) · MPN PBSS305PD,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation1.1W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 100V 2A 110MHz 1.1W Surface Mount SOT-457

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