Nexperia PBSM5240PFH,115

Nexperia · FETs & Power MOSFETs · MPN PBSM5240PFH,115

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Specifications

Gate Charge(Qg)890pC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)7.7pF
Current - Continuous Drain(Id)660mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation760mW
Reverse Transfer Capacitance (Crss@Vds)4.8pF
RDS(on)370mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)43pF
TypeN-Channel

Technical details

30V 660mA 700mV 760mW 370mΩ@4.5V 1 N-channel N-Channel SOT-1118 Single FETs, MOSFETs RoHS

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