Nexperia PBLS6003D,115

Nexperia · Transistors (BJTs) · MPN PBLS6003D,115

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Specifications

DC Current Gain30
Input Resistor10kΩ
Resistor Ratio1
Number-
Pd - Power Dissipation400mW
Input Voltage (VI(on)@Ic,Vce)1.8V
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)700mA;100mA
Collector - Emitter Voltage VCEO60V;50V
Operating Temperature-65℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 60V 50V 700mA 100mA 400mW Surface Mount SOT-457

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