Nexperia PBHV8118T,215

Nexperia · Transistors (BJTs) · MPN PBHV8118T,215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO180V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))40mV

Technical details

Bipolar (BJT) Transistor NPN 180V 1A 30MHz 300mW Surface Mount SOT-23

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