Nexperia NXV100XPR

Nexperia · FETs & Power MOSFETs · MPN NXV100XPR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.4nC@4.5V
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation340mW;2.1W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)140mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)354pF

Technical details

P-Channel 30V 1.5A 340mW 2.1W Surface Mount TO-236AB

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