Nexperia NX3020NAKVYL

Nexperia · FETs & Power MOSFETs · MPN NX3020NAKVYL

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Specifications

Current - Continuous Drain(Id)200mA
RDS(on)2.7Ω@10V
Pd - Power Dissipation260mW
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)1.1pF
Number2 N-Channel
Input Capacitance(Ciss)20pF
Gate Charge(Qg)440pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

200mA 2.7Ω@10V 260mW 1.4V 2 N-Channel SOT-666 FET, MOSFET Arrays RoHS

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