Nexperia NX1029XH

Nexperia · FETs & Power MOSFETs · MPN NX1029XH

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Specifications

Current - Continuous Drain(Id)170mA
RDS(on)7.5Ω@10V
Pd - Power Dissipation330mW
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage60V;50V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)24pF
Gate Charge(Qg)350pC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)7pF;4.5pF

Technical details

N-Channel+P-Channel Array 170mA 330mW Surface Mount SOT-666

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