Nexperia NX1029X,115

Nexperia · FETs & Power MOSFETs · MPN NX1029X,115

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Specifications

Current - Continuous Drain(Id)330mA;170mA
RDS(on)1Ω@10V;4.5Ω@10V
Pd - Power Dissipation500mW
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage60V;50V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)4pF;1.3pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)33pF;24pF
Gate Charge(Qg)350pC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)7pF;4.5pF

Technical details

N-Channel+P-Channel Array 60V 50V 330mA 170mA 500mW Surface Mount SOT-666

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