Nexperia NHUMH13X

Nexperia · Transistors (BJTs) · MPN NHUMH13X

No reviews yet — be the first to review Nexperia NHUMH13X.

Specifications

DC Current Gain100
Input Resistor4.7kΩ
Resistor Ratio10
Number2 NPN (Pre-Biased)
Pd - Power Dissipation350mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO80V
Operating Temperature-55℃~+150℃

Technical details

100 2 NPN (Pre-Biased) 350mW 100mA 80V TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)