Nexperia · Transistors (BJTs) · MPN NHUMH10X
No reviews yet — be the first to review Nexperia NHUMH10X.
| Emitter-Base Voltage VEBO | 7V |
|---|---|
| DC Current Gain | 100 |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 21 |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 350mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V |
| Voltage - Input(Max)(VI(off)) | 500mV |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
100 1 NPN, 1 PNP Pre-Biased 350mW 100mA 80V TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS