Nexperia · Transistors (BJTs) · MPN NHUMD3X
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 170MHz |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 50 |
| Vce Saturation(VCE(sat)) | 100mV |
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 350mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,300mV |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
50 350mW 100mA 80V 1 NPN, 1 PNP Pre-Biased TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS