Nexperia · Transistors (BJTs) · MPN NHUMD2X
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 350mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
70 350mW 100mA 80V 1 NPN, 1 PNP Pre-Biased TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS