Nexperia NHDTC124ETR

Nexperia · Transistors (BJTs) · MPN NHDTC124ETR

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Specifications

Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain70
Vce Saturation(VCE(sat))100mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor22kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 80V 100mA 250mW Surface Mount TO-236AB

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