Nexperia MJD44H11AJ

Nexperia · Transistors (BJTs) · MPN MJD44H11AJ

No reviews yet — be the first to review Nexperia MJD44H11AJ.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation1.75W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK

Related Transistors (BJTs)