Nexperia MJD44H11

Nexperia · Transistors (BJTs) · MPN MJD44H11

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Specifications

Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation20W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))1V
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 80V 8A 160MHz 20W Surface Mount TO-252

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