Nexperia · FETs & Power MOSFETs · MPN GANE3R9-150QBAZ
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 20nC |
| Output Capacitance(Coss) | 900pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 65W |
| Technology | E-mode |
| RDS(on) | 3.2mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 10.5pF |
| Number | - |
| Input Capacitance(Ciss) | 2200pF |
150V 100A 1.1V 65W 3.2mΩ Single FETs, MOSFETs RoHS