Nexperia · FETs & Power MOSFETs · MPN GAN3R2-100CBEAZ
No reviews yet — be the first to review Nexperia GAN3R2-100CBEAZ.
| Gate Charge(Qg) | 9.2nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Output Capacitance(Coss) | 460pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Technology | E-mode |
| Pd - Power Dissipation | 394W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.2pF |
| RDS(on) | 2.4mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1000pF |
100V 60A 1.1V 394W 2.4mΩ 1 N-channel N-Channel WLCSP-8(3.5x2.1) Single FETs, MOSFETs RoHS