Nexperia · FETs & Power MOSFETs · MPN GAN190-650FBEZ
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 2.8nC |
| Current - Continuous Drain(Id) | 11.5A |
| Output Capacitance(Coss) | 30pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 125W |
| Technology | E-mode |
| RDS(on) | 138mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF |
| Number | - |
| Input Capacitance(Ciss) | 96pF |
650V 11.5A 1.7V 125W 138mΩ DFN5060-5 Single FETs, MOSFETs RoHS