Nexperia · FETs & Power MOSFETs · MPN GAN140-650FBEZ
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 3.5nC |
| Output Capacitance(Coss) | 41pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 113W |
| Technology | E-mode |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF |
| RDS(on) | 106mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 125pF |
650V 17A 1.7V 113W 106mΩ 1 N-channel N-Channel DFN5060-5 Single FETs, MOSFETs RoHS